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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTORNPN (c) TO 126 FEATURES Power dissipation PCM : 1.25 W Tamb=25ae(c) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts VCE= 10 V, IC= 200 m A IC=200m A, IB= 40 m A IC=200mA, IB= 40 m A VCE=10V, f =1MHz IC=1A, Ic=100mA 1.BASE 2.COLLECTOR 3.EMITTER 123 unless Test otherwise specified(c) TYP MAX UNIT V V V 100 100 5 9 40 0.8 1.1 5 0.5 2.5 V V MHz s s A A conditions MIN 600 400 6 Ic= 100|I AIE=0 Ic= 1 mA IB=0 IE= 100|I AIC=0 VCB= 600 VEB= 6 VIE=0 VIC=0 VCE= 10 V, IC= 250 A I 1=-IB2=0.2A B VCC=100V CLASSIFICATION OF h FE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40 TO-126 PACKAGE OUTLINE DIMENSIONS D A1 A E b1 L e e1 L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126 P |O Symbol A A1 b b1 c D E e e1 L L1 P |O Dimensions In Inches Max 0.114 0.059 0.034 0.054 0.024 0.307 0.433 |
Price & Availability of 3DD13002-TO-126 |
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